mitsubishi nch power mosfet FS3KM-9A high-speed switching use sep. 2001 2.6 0.2 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? ? ? ? ? gate ? drain ? source mitsubishi nch power mosfet FS3KM-9A high-speed switching use 450 30 3 9 3 25 ?5 ~ +150 ?5 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit FS3KM-9A outline drawing dimensions in mm application smps, ac-adapter, power supply of printer, copier, tv, vcr. etc. to-220fn 10v drive v dss ............................................................................... 450v r ds (on) (max) ................................................................ 3.5 ? i d ........................................................................................... 3a
mitsubishi nch power mosfet FS3KM-9A high-speed switching use sep. 2001 3.0 2.60 2.60 2.0 280 35 7 10 15 45 25 1.5 i d = 1ma, v gs = 0v i gs = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 450v, v gs = 0v i d = 1ma, v ds = 10v i d = 1a, v gs = 10v i d = 1a, v gs = 10v i d = 1a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 1a, v gs = 10v, r gen = r gs = 50 ? i s = 1a, v gs = 0v channel to case drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance 450 30 2.5 1.2 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 10 1 3.5 3.50 3.50 2.0 5.00 symbol unit parameter test conditions limits min. typ. max. 0 8 16 24 32 40 0 200 50 100 150 10 ? 7 10 0 5 7 2 3 10 1 5 7 2 3 2 3 10 1 357 2 10 2 357 7 235 2 5 2 3 t c = 25 c single pulse 100 s tw = 10 s dc 1ms 10ms 0 2 4 6 8 10 0 1020304050 v gs = 20v,10v p d = 25w t c = 25 c pulse test 5v 8v,6v 0 1.0 2.0 3.0 4.0 5.0 0 4 8 121620 p d = 25w v gs = 20v,10v,8v t c = 25 c pulse test 6v 5v 4v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) performance curves
mitsubishi nch power mosfet FS3KM-9A high-speed switching use sep. 2001 0 8 16 24 32 40 048121620 t c = 25 c pulse test i d = 4a 3a 2a 1a 0 2 4 6 8 10 10 2 2 10 1 357 2 10 0 357 2 10 1 357 t c = 25 c pulse test v gs = 10v 20v 0 2 4 6 8 10 0 4 8 12 16 20 t c = 25 c v ds = 10v pulse test 10 1 10 1 10 0 23 57 23 57 10 1 10 0 2 3 5 7 10 1 2 3 5 7 v ds = 10v pulse test t c = 25 c 75 c 125 c 10 0 357 10 1 3 2 257 10 2 3 23 2 57 10 1 3 5 7 10 2 2 2 2 3 5 7 10 3 2 3 5 7 ciss coss tch = 25 c v gs = 0v f = 1mhz crss 10 1 10 1 10 0 23 57 23 57 10 1 5 7 10 2 2 3 5 7 2 3 5 tch = 25 c v gs = 10v v dd = 200v r gen = r gs = 50 ? t d(off) t d(on) t f t r on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state resistance r ds (on) ( ? )
mitsubishi nch power mosfet FS3KM-9A high-speed switching use sep. 2001 0 1.0 2.0 3.0 4.0 5.0 50 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 50 0 50 100 150 v gs = 0v i d = 1ma 10 2 10 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 3 10 2 10 1 p dm tw d = t tw t d = 1.0 = 0.5 = 0.2 = 0.1 single pulse = 0.05 = 0.02 = 0.01 0 4 8 12 16 20 048121620 v ds =100v 400v 200v t c h = 25 c i d = 3a 0 2 4 6 8 10 0 0.8 1.6 2.4 3.2 4.0 v gs = 0v pulse test t c = 125 c 75 c 25 c 10 1 10 0 2 3 5 7 10 1 2 3 5 7 50 0 50 100 150 v gs = 10v i d = 1a pulse test gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch c) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) source current i s (a)
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